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Anotace knihy

An interdisciplinary discussion of key materials issues and controversies in strained layer epitaxy is presented in this new volume from MRS. Research involving GeSi alloys and Si:C alloys are well represented. In the case of GeSi alloys, utilizing both strained and relaxed structures appears to be a strong component of the current research. Applications, devices and synthesis of improved relaxed and strained materials are featured. Special efforts to integrate the III-V and IV communities were also made during this symposium, and those efforts are reflected in the proceedings volume as well. Results on compositional graded layers in both the GeSi and III-V materials systems are presented. Topics include: general issues; ordering/low dimensional structures; characterization; device applications; growth of Si-based materials; and growth of compound semiconductors.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Plný název: Strained Layer Epitaxy: Volume 379
• Podnázev: Materials, Processing, and Device Applications
• Autor: John C. BeanKeh-Yung ChengEugene A. FitzgeraldJudy Hoyt
• Jazyk: Angličtina
• Vazba: Pevná
• Počet stran: 521
• EAN: 9781558992825
• ISBN: 1558992820
• ID: 02060045
• Nakladatelství: Materials Research Society
• Hmotnost: 886 g
• Rozměry: 234 × 155 × 33 mm
• Datum vydání: 09. November 1995

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