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Více informací o knize Rapid Thermal Processing for Future Semiconductor Devices

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Anotace knihy

This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas such as: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Plný název: Rapid Thermal Processing for Future Semiconductor Devices
• Autor: Fukuda
• Jazyk: Angličtina
• Vazba: Brožovaná
• Počet stran: 160
• EAN: 9780444513397
• ISBN: 0444513396
• ID: 04079629
• Nakladatelství: Elsevier Books
• Hmotnost: 310 g
• Rozměry: 243 × 172 × 17 mm
• Datum vydání: 02. April 2003

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