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Anotace knihy

The increasing requirements for semiconductor (smaller geometry/high density) and flat panel/solar panel industry (large surface) are pushing the limits for level and accuracy of RF power delivery. RF instrumentation has to provide essential parameters to accurately (less then 1%) monitor and control the actual plasma impedance and RF power delivered to the plasma. The topics included in this book range from the basic elements of RF instrumentation to advanced signal processing and RF metrology. Absolute accuracy of the RF metrology is compounded by errors introduced by the measurement system, by the chosen calibration method and by power references. RF high power standards are not traceable directly to primary metrology references provided by national standards, therefore the responsibility for the absolute RF power references are in the hands of private companies. The book also has a chapter dedicated to RF high power calibration methods. The present research is intended for students, engineers and designers in the field of plasma generators, lasers exciters, RF heating and lighting, Magnetic Resonance Imaging, cauterization, sterilization and broadcast.

Parametry knihy

Zařazení knihy Knihy v angličtině Computing & information technology Information technology: general issues

• Plný název: High Power RF Instrumentation Techniques
• Podnázev: Design Considerations for High Accuracy, High Power RF Instrumentation.
• Autor: Ovidiu Stan
• Jazyk: Angličtina
• Vazba: Brožovaná
• Počet stran: 172
• EAN: 9783836474146
• ISBN: 383647414X
• ID: 07093772
• Nakladatelství: VDM Verlag Dr. Mueller E.K.
• Hmotnost: 236 g
• Rozměry: 229 × 152 × 9 mm
• Datum vydání: 03. April 2008

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