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Více informací o knize Ferroelectric Random Access Memories

• Parametry knihy
• Anotace
• Oblíbené z jiného soudku

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Anotace knihy

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introductory book on FeRAM for graduate students and newcomers to this field; it also helps specialists to understand FeRAMs more deeply.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Plný název: Ferroelectric Random Access Memories
• Podnázev: Fundamentals and Applications
• Autor: Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto
• Jazyk: Angličtina
• Vazba: Pevná
• Počet stran: 291
• EAN: 9783540407188
• ISBN: 3540407189
• ID: 01562920
• Nakladatelství: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
• Hmotnost: 1350 g
• Rozměry: 235 × 155 × 24 mm
• Datum vydání: 16. April 2004

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