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Více informací o knize Defect generation in oxides of p-channel MOSFETs in presence of water

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Anotace knihy

Hydrogenous species play a key role in radiation§induced charge buildup in metal oxide semiconductor§field effect transistors (MOSFETs). The amount of§hydrogen present in ambient gases used during device§fabrication can be correlated to the concentration of§radiation-induced interface traps post processing.§The effects of water on defect formation in MOSFETs§before and after radiation exposure have been§studied. Greatly enhanced post-irradiation defect§generation was observed in the gate oxides of§p-channel MOS transistors that were exposed to water.§Low frequency (1/f) noise measurements also showed§enhanced noise power spectral densities in the§p-channel transistors consistent with the enhanced§post-irradiation increase in defect density.§Phosphorus and boron dopant atoms are present in the§field oxides of the n-channel and p-channel§transistors because of source and drain implant§steps. This can lead to enhanced water-induced defect§formation in the gate oxides of p-channel transistors§compared to n-channel transistors before and after§irradiation. These results are significant for the§performance of MOS technologies in non-hermetic§environments.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Energy technology & engineering Electrical engineering

• Plný název: Defect generation in oxides of p-channel MOSFETs in presence of water
• Autor: Aritra Dasgupta
• Jazyk: Angličtina
• Vazba: Brožovaná
• Počet stran: 60
• EAN: 9783639156027
• ISBN: 3639156021
• ID: 06824091
• Nakladatelství: VDM Verlag
• Hmotnost: 100 g
• Rozměry: 229 × 152 × 4 mm
• Datum vydání: 11. June 2009

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