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Více informací o knize Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

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Anotace knihy

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600_and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10_7_-cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Plný název: Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
• Autor: Zhiqiang Li
• Jazyk: Angličtina
• Vazba: Pevná
• Počet stran: 59
• EAN: 9783662496817
• ISBN: 366249681X
• ID: 02937112
• Nakladatelství: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
• Hmotnost: 299 g
• Rozměry: 235 × 155 × 11 mm
• Datum vydání: 24. March 2016

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