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Anotace knihy

There has been witness to remarkable progress in the ability to (a) grow well-controlled dots; (b) characterize dots on a near-atomic level; and (c) theoretically describe their electronic properties using not only continuum, but also atomistic approaches. This book focuses on the broad scientific and technological interest in semiconductor quantum dots. Papers on growth and self-assembly/self-organization, as well as characterization of semiconductor quantum dots based upon various materials systems, e.g., silicon-germanium, III-V materials, and II-VI materials, are included. Discussions of technological applications, ranging from biomedical technology, microelectronics and photonics, to more esoteric applications including quantum computing, are also featured. Topics include: Si and Ge dots; II-VI and other free-standing (colloidal) dots; near-field spectroscopy of quantum dots, wires and metals; organized dots and dot arrays; transport, coulomb blockade and metallic dots; optical spectroscopy and phonons; light-emitting quantum dots; and structural characterization and growth.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Plný název: Semiconductor Quantum Dots: Volume 571
• Autor: Steven C. MossDaryush IlaHoward W. H. LeeDavid J. Norris
• Jazyk: Angličtina
• Vazba: Pevná
• Počet stran: 392
• EAN: 9781558994782
• ISBN: 1558994785
• ID: 02060212
• Nakladatelství: Cambridge University Press
• Hmotnost: 690 g
• Rozměry: 229 × 152 × 22 mm
• Datum vydání: 07. March 2000

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