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Anotace knihy

Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.

Parametry knihy

Zařazení knihy Knihy v angličtině Mathematics & science Physics Electricity, electromagnetism & magnetism

• Plný název: Rare-Earth Doped Semiconductors II: Volume 422
• Autor: Salvatore CoffaAlbert PolmanRobert N. Schwartz
• Jazyk: Angličtina
• Vazba: Pevná
• Počet stran: 366
• EAN: 9781558993259
• ISBN: 1558993258
• ID: 02060079
• Nakladatelství: Materials Research Society
• Hmotnost: 682 g
• Rozměry: 234 × 160 × 25 mm
• Datum vydání: 25. October 1996

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