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Anotace knihy

Plasma Etching for CMOS Devices Realization addresses the ways in which plasma etch technologies are used to push the limits of semiconductor device fabrication. With the introduction of new materials and architectures, there are now unprecedented etching challenges, such as critical dimension control, profile control, and film damage at the atomic scale. This book addresses all the issues encountered in plasma etching processes for CMOS device realization. After an introduction of the different CMOS devices, the authors explore etch challenges and their associated solutions. Users will find this work to be the link between discovery of FEOL difficulties (today and tomorrow) and a precise understanding of the etch issues encountered in the microelectronics industry. Helps readers discover the master technology used to pattern complex structures involving various materialsExplores the capabilities of cold plasmas to generate well controlled etched profiles and high etch selectivities between materialsTeaches users how etch compensation helps to create devices that are smaller than 20 nm

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Plný název: Plasma Etching Processes for CMOS Devices Realization
• Autor: Nicolas Posseme
• Jazyk: Angličtina
• Vazba: Pevná
• Počet stran: 136
• EAN: 9781785480966
• ISBN: 1785480960
• ID: 14644290
• Nakladatelství: ISTE Press Ltd - Elsevier Inc
• Hmotnost: 372 g
• Rozměry: 160 × 237 × 15 mm
• Datum vydání: 18. January 2017

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