Nanoscale CMOS - Innovative Materials Modeling and Characterization / Nejlevnější knihy
Nanoscale CMOS - Innovative Materials Modeling and  Characterization

Kód: 01434030

Nanoscale CMOS - Innovative Materials Modeling and Characterization

Autor Francis Balestra

This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices.§Leading global industry bodies ... celý popis

6533


Skladem u dodavatele v malém množství
Odesíláme za 11-15 dnů

Potřebujete více kusů?Máte-li zájem o více kusů, prověřte, prosím, nejprve dostupnost titulu na naši zákaznické podpoře.


Přidat mezi přání

Mohlo by se vám také líbit

Dárkový poukaz: Radost zaručena

Objednat dárkový poukazVíce informací

Více informací o knize Nanoscale CMOS - Innovative Materials Modeling and Characterization

Nákupem získáte 653 bodů

Anotace knihy

This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices.§Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future - in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling.§The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

6533

Oblíbené z jiného soudku



Osobní odběr Praha, Brno a 46611 dalších

Copyright ©2008-26 nejlevnejsi-knihy.cz Všechna práva vyhrazenaSoukromíCookies


Můj účet: Přihlásit se
Všechny knihy světa na jednom místě. Navíc za skvělé ceny.

Nákupní košík ( prázdný )

Vyzvednutí v Balikovně a PPL
boxech
zdarma nad 1 499 Kč.

Nacházíte se: