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Více informací o knize MOSFET Models for VLSI Circuit Simulation

• Parametry knihy
• Anotace
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Anotace knihy

The book has 12 chapters. Starting from the overview of various aspects of device modeling for circuit simulators, a brief but complete review of seminconductor device physics and pn junction theory required for understanding MOSFET models is covered. The MOS transistor characteristics as applied to current MOS technologies are then discussed. First, the theory of MOS capacitors that is essential for understanding of MOS transistor models are discussed. This is followed by different types of MOSFET models such as threshold voltage, DC (steady-state), AC, and reliability models and the corresponding model parameter determination. The diode and MOSFET models as implemented in Berkeley SPICE, are also covered. Finally, the statistical variation of model parameters due to process variations are discussed.

Parametry knihy

Zařazení knihy Knihy v angličtině Mathematics & science Mathematics Calculus & mathematical analysis

• Plný název: MOSFET Models for VLSI Circuit Simulation
• Podnázev: Theory and Practice
• Autor: Narain D. Arora
• Jazyk: Angličtina
• Vazba: Brožovaná
• Počet stran: 605
• EAN: 9783709192498
• ISBN: 3709192498
• ID: 02119156
• Nakladatelství: Springer Verlag GmbH
• Hmotnost: 1074 g
• Rozměry: 244 × 170 × 34 mm
• Datum vydání: 22. January 2012

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