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Více informací o knize Leakage currents in MOS transistor

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Anotace knihy

In order to bring the classification of leakage minimization approaches, analyzed based on their fundamental design and mechanism, such as biasing technique, power gating, and multi-threshold techniques. A brief summary of different leakage control schemes with their merits and demerits along with the limitations by using these schemes are presented. In this survey, origins of leakage currents in a short-channel device and various leakage control techniques for ultra-low power SRAM design are discussed. The rest of the book chapter is organized as follows. In section 2 presents the origin of leakage current in a short-channel device. Various biasing techniques for leakage control SRAM are discussed in section 3. Emerging power gating techniques for low power SRAM designs are presented in section 4. Asymmetrical SRAM designs with multi-threshold transistor are described and comparisons of various low power techniques are tabulated in section 5. Finally, the survey chapter concludes in section 6.

Parametry knihy

• Plný název: Leakage currents in MOS transistor
• Autor: P. K. Bikki, P. Karuppanan
• Jazyk: Angličtina
• Vazba: Brožovaná
• Počet stran: 52
• EAN: 9783659891656
• ID: 16426638
• Nakladatelství: LAP Lambert Academic Publishing
• Hmotnost: 96 g
• Rozměry: 220 × 150 × 3 mm
• Rok vydání: 2017

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