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Anotace knihy

This monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a consistent hierarchy of simulation tools. The basis of this hierarchy is the full-band Monte-Carlo device model which is discussed in detail, including its numerical and stochastic properties. The drift-diffusion and hydrodynamic models for large-signal, small-signal, and noise analysis are derived from the Boltzmann transport equation in such a way that all transport and noise parameters can be obtained by Monte-Carlo simulations. With this hierarchy of simulation tools the device characteristics of strained Si MOSFETs and SiGe HBTs are analysed and the accuracy of the momentum-based models is assessed by comparison with the Monte-Carlo device simulator.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Plný název: Hierarchical Device Simulation
• Podnázev: The Monte-Carlo Perspective
• Autor: C. Jungemann, B. Meinzerhagen
• Jazyk: Angličtina
• Vazba: Pevná
• Počet stran: 261
• EAN: 9783211013618
• ISBN: 321101361X
• ID: 01463962
• Nakladatelství: Springer, Wien
• Hmotnost: 636 g
• Rozměry: 234 × 156 × 17 mm
• Rok vydání: 2003

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