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Více informací o knize Gas Source Molecular Beam Epitaxy

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Anotace knihy

The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Mechanical engineering & materials Materials science

• Plný název: Gas Source Molecular Beam Epitaxy
• Podnázev: Growth and Properties of Phosphorus Containing III-V Heterostructures
• Autor: Henryk Temkin
• Jazyk: Angličtina
• Vazba: Brožovaná
• Počet stran: 428
• EAN: 9783642781292
• ISBN: 9783642781292
• ID: 06621930
• Nakladatelství: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
• Hmotnost: 668 g
• Rozměry: 235 × 155 × 24 mm
• Datum vydání: 30. December 2011

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