Mohlo by se vám také líbit

Informovat o naskladnění knihy

Více informací o knize GaN and Related Alloys - 2000: Volume 639

• Parametry knihy
• Anotace
• Oblíbené z jiného soudku

Nákupem získáte 88 bodů

Anotace knihy

This year's nitride proceedings provides an integrated view of advances in both the basic sciences and the technology of group-III nitride electronic and optoelectronic devices. The devices discussed include high-frequency, high-power, and high-temperature devices as well as light-emitting diodes, laser diodes, and UV photodetectors. Challenges and goals for the advancement of this field include the further optimization and stabilization of growth processes, and growth of GaInN, AlGaN, AlInN, and quaternary layers. The book captures the most exciting developments of this field, and should prove useful for both researchers and students of this novel science and technology. Topics include: advances in growth; advanced alloys and characterization; growth and characterization; dopants and processing; lateral epitaxy and growth; optical properties and light emitters; electronic transport and quantum dots; characterization and bandstructure; quantum dots and photo detectors; electronic properties and transport; light emitters and strain control and light emitters and electronic devices.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Mechanical engineering & materials Materials science

• Plný název: GaN and Related Alloys - 2000: Volume 639
• Autor: Christian WetzelMichael S. ShurUmesh K. MishraBernard Gil
• Jazyk: Angličtina
• Vazba: Pevná
• Počet stran: 967
• EAN: 9781558995499
• ISBN: 1558995498
• ID: 02060273
• Nakladatelství: Materials Research Society
• Hmotnost: 1500 g
• Rozměry: 234 × 163 × 56 mm
• Datum vydání: 04. September 2001

Oblíbené z jiného soudku

---

---

---