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Anotace knihy

This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O ). Ga2O has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O .

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Plný název: Gallium Oxide
• Podnázev: Materials Properties, Crystal Growth, and Devices
• Autor: Masataka Higashiwaki, Shizuo Fujita
• Jazyk: Angličtina
• Vazba: Pevná
• Počet stran: 764
• EAN: 9783030371524
• ID: 25208523
• Nakladatelství: Springer Nature Switzerland AG
• Hmotnost: 1346 g
• Rozměry: 235 × 155 × 48 mm
• Datum vydání: 25. April 2020

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