Kód: 02060462
Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in thi ... celý popis
Angličtina
Nákupem získáte 239 bodů
Anotace knihy
Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
Parametry knihy
Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Mechanical engineering & materials Materials science
2392 Kč
Angličtina
Osobní odběr Praha, Brno a 47512 dalších
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