Více informací o knize Device Physics, Modeling, Technology, and Analysis for Silicon MESFET

• Parametry knihy
• Anotace
• Oblíbené z jiného soudku

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Anotace knihy

This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.

Parametry knihy

• Plný název: Device Physics, Modeling, Technology, and Analysis for Silicon MESFET
• Autor: Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry
• Jazyk: Angličtina
• Vazba: Pevná
• Počet stran: 122
• EAN: 9783030045128
• ID: 20403074
• Nakladatelství: Springer Nature Switzerland AG
• Hmotnost: 454 g
• Rozměry: 235 × 155 × 13 mm
• Datum vydání: 20. February 2019

Oblíbené z jiného soudku

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