Computer-Aided Design and VLSI Device Development / Nejlevnější knihy
Computer-Aided Design and VLSI Device Development

Kód: 02174570

Computer-Aided Design and VLSI Device Development

Autor it Man Cham, oo-Young Oh, John L. Moll, eunmyung Lee

examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception o ... celý popis

5094


Skladem u dodavatele v malém množství
Odesíláme za 12-17 dnů

Potřebujete více kusů?Máte-li zájem o více kusů, prověřte, prosím, nejprve dostupnost titulu na naši zákaznické podpoře.


Přidat mezi přání

Mohlo by se vám také líbit

Darujte tuto knihu ještě dnes
  1. Objednejte knihu a zvolte Zaslat jako dárek.
  2. Obratem obdržíte darovací poukaz na knihu, který můžete ihned předat obdarovanému.
  3. Knihu zašleme na adresu obdarovaného, o nic se nestaráte.

Více informací

Více informací o knize Computer-Aided Design and VLSI Device Development

Nákupem získáte 509 bodů

Anotace knihy

examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Energy technology & engineering Electrical engineering

5094

Oblíbené z jiného soudku



Osobní odběr Praha, Brno a 12903 dalších

Copyright ©2008-24 nejlevnejsi-knihy.cz Všechna práva vyhrazenaSoukromíCookies


Můj účet: Přihlásit se
Všechny knihy světa na jednom místě. Navíc za skvělé ceny.

Nákupní košík ( prázdný )

Vyzvednutí v Zásilkovně
zdarma nad 1 499 Kč.

Nacházíte se: