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Více informací o knize CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155

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Anotace knihy

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Mechanical engineering & materials Materials science

• Plný název: CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155
• Autor: Alexander A. DemkovBill TaylorH. Rusty HarrisJeffery W. Butterbaugh
• Jazyk: Angličtina
• Vazba: Pevná
• Počet stran: 194
• EAN: 9781605111285
• ISBN: 1605111287
• ID: 02060485
• Nakladatelství: Materials Research Society
• Hmotnost: 430 g
• Rozměry: 236 × 160 × 14 mm
• Datum vydání: 19. November 2009

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