Kód: 01434720
Charged Semiconductor Defects
Autor Edmund G. Seebauer, Meredith C. Kratzer
"Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. ... celý popis
- Jazyk:
Angličtina - Vazba: Brožovaná
- Počet stran: 298
Nakladatelství: Springer London Ltd, 2010
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Více informací o knize Charged Semiconductor Defects
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Anotace knihy
"Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.
Parametry knihy
Zařazení knihy Knihy v angličtině Mathematics & science Chemistry Analytical chemistry
3532 Kč
- Plný název: Charged Semiconductor Defects
- Podnázev: Structure, Thermodynamics and Diffusion
- Autor: Edmund G. Seebauer, Meredith C. Kratzer
- Jazyk: Angličtina
- Vazba: Brožovaná
- Počet stran: 298
- EAN: 9781849968201
- ISBN: 1849968209
- ID: 01434720
- Nakladatelství: Springer London Ltd
- Hmotnost: 474 g
- Rozměry: 235 × 155 × 17 mm
- Datum vydání: 22. October 2010
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