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Více informací o knize Analysis and Design of MOSFETs

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• Anotace
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Anotace knihy

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Plný název: Analysis and Design of MOSFETs
• Podnázev: Modeling, Simulation, and Parameter Extraction
• Autor: Juin Jei Liou, Adelmo Ortiz-Conde, Francisco Garcia-Sanchez
• Jazyk: Angličtina
• Vazba: Pevná
• Počet stran: 349
• EAN: 9780412146015
• ISBN: 0412146010
• ID: 01386058
• Nakladatelství: Chapman and Hall
• Hmotnost: 1540 g
• Rozměry: 235 × 155 × 25 mm
• Datum vydání: 30. September 1998

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