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Anotace knihy

The RC-delay and crosstalk noise of the interconnect §system are major problems in high-performance §semiconductor chips. The key is reducing the §coupling capacitance or the k-value of the insulator §between the metal lines by substituting silicon §dioxide by low-k materials or by integrating §cavities, called air gaps. Here, air gaps fabricated §by the selective Ozone-TEOS deposition are §considered to reduce the line-to-line capacitance. §Different integration schemes were fabricated; air §gaps requiring an additional lithography in Cu §damascene metallization, self-aligned air gaps in Cu §and in tungsten metallization, utilizing RIE §(reactive ion etch) processing, and air gaps §fabricated using non-conformal deposition processes §for the insulator in a 90nm Al RIE metallization §scheme. Structures were fabricated with and without §air gaps to compare the properties and to examine §different aspects such as k-value, simulations, §capacitance, electrical breakdown, leakage current, §electromigration, and self-heating by high current §application. The results show very promising §electrical properties of air gaps, exhibiting an §attractive alternative to low-k materials.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Technology: general issues Engineering: general

• Plný název: Air Gap Structures for Advanced Metallization Schemes
• Podnázev: Development and Electrical Characterization
• Autor: Andreas Stich
• Jazyk: Angličtina
• Vazba: Brožovaná
• Počet stran: 160
• EAN: 9783639060881
• ISBN: 3639060881
• ID: 06815484
• Nakladatelství: VDM Verlag Dr. Mueller E.K.
• Hmotnost: 222 g
• Rozměry: 229 × 152 × 9 mm
• Datum vydání: 03. September 2008

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