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Více informací o knize Wide-Bandgap Semiconductors for High-Power, High-Frequency, and High-Temperature Applications - 1999: Volume 572

• Parametry knihy
• Anotace
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Anotace knihy

There is an ever-present need for electronic devices with improved power, frequency and temperature performance. To that end, the introduction of the SiC substrate and the demonstration of bright III-N light-emitting diodes have been catalysts for increased research and development of wide-bandgap semiconductor materials and devices during the nineties. This book from the Materials Research Society focuses on high-power, high-frequency and high-temperature applications of these wide-bandgap semiconductors. Topics include: SiC devices and processing; SiC epitaxy and characterization; SiC bulk growth and characterization; GaN growth and characterization; and GaN devices and processing.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Plný název: Wide-Bandgap Semiconductors for High-Power, High-Frequency, and High-Temperature Applications - 1999: Volume 572
• Autor: Steven C. BinariAlbert A. BurkMichael R. MellochChanh Nguyen
• Jazyk: Angličtina
• Vazba: Pevná
• Počet stran: 559
• EAN: 9781558994799
• ISBN: 1558994793
• ID: 02060213
• Nakladatelství: Materials Research Society
• Hmotnost: 909 g
• Rozměry: 234 × 157 × 33 mm
• Datum vydání: 20. September 1999

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