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Více informací o knize VARIATION OF POPULATION IN SILICON WITH P-111Cd annealing temperature

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Anotace knihy

Over the last few years researchers have made many works on semiconductors as long as semiconductor technology plays a great role in developing the technologies we are using now a days. therefore my work has an input on impacts of point defects in semiconductor. This work will help researchers who are doing on efficiency of semiconductors and the i somewhat important methods used also for other researchers who are out of Physics such as medicine, veterinary to determin the structures of DNA in human and other animals. people who are interested on using this method for researches can refer this book. generally this book provides information about the effect of annealing temperature in the formation of complex Cd-P population in silicon. It also provides information for further study of point defects in semiconductor finally it gives idea about how researches will held on.

Parametry knihy

Zařazení knihy Knihy v angličtině Mathematics & science Physics

• Plný název: VARIATION OF POPULATION IN SILICON WITH P-111Cd annealing temperature
• Autor: Temesgen Yirdaw Berhe, Genene Tessema
• Jazyk: Angličtina
• Vazba: Brožovaná
• Počet stran: 60
• EAN: 9783639256451
• ISBN: 363925645X
• ID: 06833075
• Nakladatelství: VDM Verlag
• Hmotnost: 100 g
• Rozměry: 229 × 152 × 4 mm
• Datum vydání: 05. May 2010

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