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Více informací o knize Silicon-Germanium Strained Layers and Heterostructures

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Anotace knihy

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of "Silicon-Germanium Strained Layers and Heterostructures" provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. It is fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review. The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject. It is appropriate for students and senior researchers.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Plný název: Silicon-Germanium Strained Layers and Heterostructures
• Autor: M. Willander, Suresh C. Jain
• Jazyk: Angličtina
• Vazba: Pevná
• Počet stran: 322
• EAN: 9780127521831
• ISBN: 0127521836
• ID: 04495786
• Nakladatelství: Academic Press
• Hmotnost: 640 g
• Rozměry: 152 × 229 × 19 mm
• Datum vydání: 06. October 2003

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