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Více informací o knize Nanoelectronic devices in InGaAs/InP

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Anotace knihy

As current silicon-based microelectronic devices and circuits are approaching their fundamental limits, the research field of nanoelectronics is emerging worldwide. Materials other than silicon and device principles other than complementary metal-oxide-semiconductor (CMOS) are being investigated. With this background, the present book focuses on nanoelectronic devices in InGaAs/InP based on ballistic and quantum effects. The main material studied was a modulation doped InGaAs/InP two-dimensional electron gas. The book covers mainly three types of devices and their twofold integration: in-plane gate transistors, three-terminal ballistic junctions and quantum dots. Novel device properties were studied in detail. The author hopes the results presented in this book to be a valuable contribution to the nanoelectronic research on InP-based semiconductors. The book should be interesting to semiconductor material scientists, device physicists and electronic engineers.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Plný název: Nanoelectronic devices in InGaAs/InP
• Autor: Jie Sun
• Jazyk: Angličtina
• Vazba: Brožovaná
• Počet stran: 84
• EAN: 9783639206685
• ISBN: 3639206681
• ID: 06828634
• Nakladatelství: VDM Verlag
• Hmotnost: 136 g
• Rozměry: 229 × 152 × 5 mm
• Datum vydání: 22. October 2009

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