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Více informací o knize Modeling and Simulation of Gate Mislaignment Effect in MOSFETs

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Anotace knihy

Rupendra Kumar Sharma received Ph.D. degree in electronics from the University of Delhi, India in 2010. His Ph.D thesis was on the modeling, simulation and characterization of gate misalignment effect in DG MOSFETs. Dr. Sharma was a Postdoctoral Researcher with the Department of Electronics (DEIS) University of Bologna, Italy, where he was involved in numerical optimization and characterization of a dual N/P channel super-junction LDMOS for low dropout voltage regulator (LDO) applications. He has also served as a Marie-Curie experienced researcher for the Telecommunication Systems Institute; Technical University of Crete, Greece on a European Funding Research Program Compact Modeling Network ("COMON") on compact modeling of nanoscale multi-gate MOSFETs and of high-voltage MOSFETs. Currently, He is working on the project "Silicon carbide based power devices and their applications for power savings" funded by European Social Fund in collaboration with Czech Science Foundation at the Faculty of Electrical Engineering, Czech Technical University in Prague. He has authored or coauthored over 32 papers in various international journals and conference proceedings.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Technology: general issues

• Plný název: Modeling and Simulation of Gate Mislaignment Effect in MOSFETs
• Autor: Sharma Rupendra Kumar
• Jazyk: Angličtina
• Vazba: Brožovaná
• Počet stran: 156
• EAN: 9783639708028
• ISBN: 3639708024
• ID: 09504890
• Nakladatelství: Scholars' Press
• Hmotnost: 236 g
• Rozměry: 229 × 152 × 10 mm
• Datum vydání: 07. July 2015

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