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Více informací o knize Materials and Physics for Nonvolatile Memories: Volume 1160

• Parametry knihy
• Anotace
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Anotace knihy

This third book in a series on nonvolatile memories builds on fundamental materials properties, materials integration, demonstration, and industrial devices gathered in those previous. A strong and increasing interest in nonvolatile memories, both domestic and international, indicates the worldwide importance of these materials and memory devices. The book features research on advanced flash memories, including nanoparticle floating gate FETs, MRAM, FeRAM, ReRAM and phase change RAMs, as well as memories using polymer materials. Papers from a joint session with Symposium FF, Novel Materials and Devices for Spintronics, are also included.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Mechanical engineering & materials Materials science

• Plný název: Materials and Physics for Nonvolatile Memories: Volume 1160
• Autor: Yoshihisa Fujisaki, Rainer Waser, Tingkai Li, Caroline Bonafos
• Jazyk: Angličtina
• Vazba: Brožovaná
• Počet stran: 216
• EAN: 9781107408296
• ISBN: 1107408296
• ID: 02439017
• Nakladatelství: Cambridge University Press
• Hmotnost: 3 g
• Rozměry: 229 × 152 × 12 mm
• Datum vydání: 05. June 2014

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