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Více informací o knize Investigation on Schottky-Barrier MOSFETs for Memory Application

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Anotace knihy

The structure of Schottky-barrier (SB) MOSFETs was investigated for both the perspective of practical applications and interest in novel Flash memory. We demonstrated how the source-side injection of hot electrons in the dopant-segregated SB (DSSB) Flash memory cell achieves high-speed, low-voltage programming with excellent injection efficiency, and no constraints on the optimization of gate and drain voltages. Moreover, the drain disturbance-free phenomenon in NOR Flash architecture was achieved. Excellent programming efficiency, especially, was achieved in a DSSB Flash device with a narrow fin width due to an enhanced lateral electric field without any sacrifice of parasitic resistance. Thus, the DSSB device can be a promising candidate in NOR Flash memory for attaining a lower programming voltage and power consumption.

Parametry knihy

• Plný název: Investigation on Schottky-Barrier MOSFETs for Memory Application
• Podnázev: Schottky-Barrier Flash Memory
• Autor: Sung-Jin Choi, Yang-Kyu Choi
• Jazyk: Angličtina
• Vazba: Brožovaná
• Počet stran: 100
• EAN: 9783843377478
• ID: 06847922
• Nakladatelství: LAP Lambert Academic Publishing
• Hmotnost: 167 g
• Rozměry: 220 × 150 × 6 mm
• Rok vydání: 2010

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