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Anotace knihy

This volume addresses the issues related to hot-carrier reliability of MOS VLSI circuits, ranging from device physics to circuit design guidelines. It presents a unified view of the physical mechanisms involved in hot-carrier induced device degradation, the prevalent models for these mechanisms, and simulation methods for estimating hot-carrier effects in the circuit environment. The newly emerging approaches to the VLSI design-for-reliability and rule-based reliability diagnosis are also discussed in detail.§Hot-Carrier Reliability of MOS VLSI Circuits is primarily for use by engineers and scientists who study device and circuit-level reliability in VLSI systems and develop practical reliability measures and models. VLSI designers will benefit from this book since it offers a comprehensive overview of the interacting mechanisms that influence hot-carrier reliability, and also provides useful guidelines for reliable VLSI design. This volume can be used as an advanced textbook or reference for a graduate-level course on VLSI reliability.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Plný název: Hot-Carrier Reliability of MOS VLSI Circuits, 1
• Autor: Yusuf Leblebici, ung-Mo (Steve) Kang
• Jazyk: Angličtina
• Vazba: Brožovaná
• Počet stran: 212
• EAN: 9781461364290
• ISBN: 1461364299
• ID: 02016387
• Nakladatelství: Springer, Berlin
• Hmotnost: 367 g
• Rozměry: 235 × 155 × 13 mm
• Datum vydání: 27. September 2012

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