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Více informací o knize GaP Heteroepitaxy on Si(100)

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Anotace knihy

Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-non-polar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroeptitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Plný název: GaP Heteroepitaxy on Si(100)
• Podnázev: Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients
• Autor: Henning Döscher
• Jazyk: Angličtina
• Vazba: Pevná
• Počet stran: 143
• EAN: 9783319028798
• ISBN: 3319028790
• ID: 02116635
• Nakladatelství: Springer International Publishing AG
• Hmotnost: 3672 g
• Rozměry: 235 × 155 × 16 mm
• Datum vydání: 28. November 2013

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