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Více informací o knize GaN, AIN, InN and their Alloys: Volume 831

• Parametry knihy
• Anotace
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Anotace knihy

This book discusses GaN and Related Alloys and reflects an emerging emphasis on the binaries of InN and AlN. The major thrust here is the topical development of thin-film growth, bulk growth techniques, methods to cover the full ternary and quaternary alloy ranges toward InN and AlN and their characterization; strategies for structural defect reduction and their characterization; ways to better control p-type doping and its characterization; device and defect physics, including polarization effects; physics of surfaces and interfaces; and device processing techniques. In addition, advances in MBE devices, high-power electronics, RF performance of electronics, UV emitters, high-efficiency light emitters, photo and chemical sensors, as well as new applications within the group-III nitrides, are also covered. The book captures the current status of this field and will be useful for researchers working with group-III nitrides, as well as for students who seek entry into this subject.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Plný název: GaN, AIN, InN and their Alloys: Volume 831
• Autor: Christian Wetzel, Bernard Gil, Masaaki Kuzuhara
• Jazyk: Angličtina
• Vazba: Pevná
• Počet stran: 784
• EAN: 9781558997790
• ISBN: 1558997792
• ID: 02060395
• Nakladatelství: Materials Research Society
• Hmotnost: 1159 g
• Rozměry: 234 × 163 × 46 mm
• Datum vydání: 01. July 2005

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