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Anotace knihy

This book is the first to explain FinFET modeling for IC simulation and the industry standard for FinFET modeling - BSIM-CMG. It gives a foundation on the physics and operation of FinFET, explaining the need to go from planar to 3D architecture. It then covers detailed aspects of the BSIMCMG model such as surface potential, charge and current calculations. A dedicated chapter on parameter extraction procedures provides a step-by-step approach for the efficient extraction of model parameters. This book is an indispensible reference and handbook for device and modeling engineers, circuit designers and students. With this book you will learn: Why you should use FinFET; the physics and operation of FinFET; details of the FinFET standard model (BSIM-CMG); parameter extraction in BSIM-CMG; and FinFET circuit design and simulation. Chenming Hu is the lead inventor and developer of FinFET . This is the first book on the industry-standard FinFET model - BSIM-CMG . The authors are developers of the BSIM-CM standard model, providing an Experts' insight into the specifications of the standard.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Plný název: FinFET Modeling for IC Simulation and Design
• Autor: Chenming Hu, Yogesh Singh Chauhan, Darsen D. Lu, Navid Payvadosi, Juan Pablo Duarte, Vanugopalan Sriramkumar, Sourabh Khandelwal, Ai Niknejad
• Jazyk: Angličtina
• Vazba: Pevná
• Počet stran: 304
• EAN: 9780124200319
• ISBN: 0124200311
• ID: 04494898
• Nakladatelství: Elsevier Books
• Hmotnost: 786 g
• Rozměry: 249 × 199 × 19 mm
• Datum vydání: 20. February 2015

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