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Anotace knihy

This book contains the proceedings of two symposia held at the 2002 MRS Fall Meeting in Boston. Papers from Symposium T, Crystalline Oxides on Semiconductors, bring together experts from different technology areas - high-k gate dielectrics, novel memories, and ferroelectrics, for example - to examine commonality among the fields. These papers offer an overview of the field, highlight interesting experimental results and device ideas, and feature innovative theoretical approaches to understanding these systems. Symposium V, Interfacial Issues for Oxide-Based Electronics, covers a wide range of topics involving the interfaces between electro-optical oxide layers and other materials. Overall, it is clear that a new generation of materials and heterostructures has been enabled by the increasing control of interfacial phenomena. Topics include: epitaxial oxide-silicon heterostructures; ferroelectric thin films on silicon; theory and modeling; crystalline oxides for gate dielectrics; transparent conducting oxides; transparent conducting oxides and oxide growth and properties; field effect devices and gate dielectrics; ferroelectrics, capacitors and sensors; organic devices and interfacial growth issues.

Parametry knihy

Zařazení knihy Knihy v angličtině Technology, engineering, agriculture Mechanical engineering & materials Materials science

• Plný název: Crystalline Oxide: Volume 747
• Podnázev: Silicon Heterostructures and Oxide Optoelectronics
• Autor: S. CarterS. A. ChambersR. DroopadD. S. Ginley
• Jazyk: Angličtina
• Vazba: Pevná
• Počet stran: 376
• EAN: 9781558996847
• ISBN: 1558996842
• ID: 02060346
• Nakladatelství: Materials Research Society
• Hmotnost: 636 g
• Datum vydání: 23. June 2003

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